1 aos semiconductor product reliability report AOT2500L , rev a plastic encapsulated device alpha & omega semiconductor, inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AOT2500L . accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. review of final electrical test result confirm s that AOT2500L passes aos quality and reliability requirements. table of contents: i. product description ii. package and die information iii. environmental stress test summary and result iv. reliability evaluation v. appendix : test data i. product description: the AOT2500L uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss . this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. - rohs compliant - halogen - free details refer to the datasheet. ii. die / package information: AOT2500L process standard sub - micron 150 v n - channel mosfet package type to 220 lead frame bare cu die attach soft solder bond ing al wire mold material epoxy resin with silica filler moisture level up to level 1
3 iii. result of reliability stress for AOT2500L note a: the reliability data presents total of available generic data up to the published date. iv. reliability evaluation fit rate (per billion): 3.27 mttf = 34906 years the presentation of fit rate for the individual product reliability is restricted by the actual burn - in sample size of the selected product ( AOT2500L ). failure rate determination is based on jedec standard jesd 85. fit means one failure per billion hours. failure rate (fit) = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 1.8 3 x 10 9 / [ 2x ( 4 x77 x 500 +12 x 77x 1 000 ) x259 ] = 3.27 mttf = 10 9 / fit = 3.06 x 10 8 hrs = 34906 years chi2 = chi squared distribution, determined by the number of failures and confidence interval n = total number of units from htrb and htgb tests h = duration of htrb/htgb testing af = acceleration factor from test to use conditions (ea = 0.7ev and tuse = 55 c ) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s )] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 130 deg c 150 deg c af 25 9 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltz m anns constant, 8.6 17164 x 10 - 5 e v / k test item test condition time point lot attribution total sample size number of failures reference standard msl precondition 168hr 85 c /85%rh +3 cycle reflow@2 6 0 c - 12 lots 2541 pcs 0 jesd22 - a113 htgb temp = 150 c , vgs=100% of vgsmax 168 hrs 500 hrs 1000 hrs 2 lots 6 lot s 616 pcs 77 pcs / lot 0 jesd22 - a108 htrb temp = 150 c , vds=80% of vdsmax 168 hrs 500 hrs 1000 hrs 2 lots 6 lots 616 pcs 77 pcs / lot 0 jesd22 - a108 hast 130 c , 85% rh , 33.3 psi, v d s = 8 0% of v d s max 96 hrs 9 lots (note a *) 693 pcs 77 pcs / lot 0 jesd22 - a110 pressure pot 121 c , 29.7psi , rh=100% 96 hrs 12 lots (note a *) 924 pcs 77 pcs / lot 0 jesd22 - a102 temperature cycle - 65 c to 150 c , air to air, 250 / 500 cycles 12 lots (note a *) 924 pcs 77 pcs / lot 0 jesd22 - a104
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